IRFH5302DTR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Turn On Delay Time :

16 ns

Input Capacitance (Ciss) (Max) @ Vds :

3635pF @ 25V

Rds On Max :

2.5 mΩ

Length :

5.9944mm

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Threshold Voltage :

2.35V

Drain to Source Resistance :

2.5MOhm

Turn-Off Delay Time :

20 ns

RoHS Status :

RoHS Compliant

REACH SVHC :

No SVHC

Min Operating Temperature :

-55°C

Drain to Source Breakdown Voltage :

30V

Width :

5mm

Fall Time (Typ) :

12 ns

Nominal Vgs :

2.35 V

Element Configuration :

Single

Number of Elements :

1

Drain to Source Voltage (Vdss) :

30V

Radiation Hardening :

No

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance :

3.635nF

Current - Continuous Drain (Id) @ 25°C :

29A Ta 100A Tc

Published :

2010

Rise Time :

30ns

Max Power Dissipation :

3.6W

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Package / Case :

8-PowerVDFN

Rds On (Max) @ Id, Vgs :

2.5mOhm @ 50A, 10V

Mounting Type :

Surface Mount

Packaging :

Cut Tape (CT)

Power Dissipation :

104W

FET Type :

N-Channel

Supplier Device Package :

PQFN (5x6) Single Die

Continuous Drain Current (ID) :

100A

Height :

838.2μm

Recovery Time :

29 ns

Max Operating Temperature :

150°C