IRFH5301TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

23 ns

Max Operating Temperature :

150°C

Turn On Delay Time :

21 ns

Power Dissipation-Max :

3.6W Ta 110W Tc

Power Dissipation :

110W

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

Rise Time :

78ns

Length :

6mm

Drain to Source Breakdown Voltage :

30V

Min Operating Temperature :

-55°C

Current - Continuous Drain (Id) @ 25°C :

35A Ta 100A Tc

Continuous Drain Current (ID) :

100A

Turn-Off Delay Time :

22 ns

Number of Elements :

1

Threshold Voltage :

1.8V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

30V

Package / Case :

8-PowerVDFN

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

77nC @ 10V

Input Capacitance :

5.114nF

Width :

5mm

Input Capacitance (Ciss) (Max) @ Vds :

5114pF @ 15V

Published :

2009

Height :

850μm

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Mount :

Surface Mount

Vgs (Max) :

±20V

Supplier Device Package :

PQFN (5x6) Single Die

Rds On Max :

1.85 mΩ

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Nominal Vgs :

1.8 V

Resistance :

1.85mOhm

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Drain to Source Resistance :

1.55mOhm

Rds On (Max) @ Id, Vgs :

1.85mOhm @ 50A, 10V

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant