IRFH5301TR2PBF
- Mfr.Part #
- IRFH5301TR2PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 35A 5X6 PQFN
- Stock
- 9,681
- In Stock :
- 9,681
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 100A
- Resistance :
- 1.85mOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 22 ns
- Nominal Vgs :
- 1.8 V
- Min Operating Temperature :
- -55°C
- Rds On (Max) @ Id, Vgs :
- 1.85mOhm @ 50A, 10V
- FET Type :
- N-Channel
- Height :
- 810μm
- Rise Time :
- 78ns
- Current - Continuous Drain (Id) @ 25°C :
- 35A Ta 100A Tc
- Turn On Delay Time :
- 21 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 5114pF @ 15V
- Number of Pins :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 77nC @ 10V
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 23 ns
- Max Operating Temperature :
- 150°C
- Power Dissipation :
- 3.6W
- Supplier Device Package :
- PQFN (5x6) Single Die
- Rds On Max :
- 1.85 mΩ
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Cut Tape (CT)
- Series :
- HEXFET®
- Mount :
- Surface Mount
- Length :
- 5mm
- Package / Case :
- 8-PowerVDFN
- Drain to Source Voltage (Vdss) :
- 30V
- Threshold Voltage :
- 1.8V
- Input Capacitance :
- 5.114nF
- Number of Elements :
- 1
- RoHS Status :
- RoHS Compliant
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 30V
- Drain to Source Resistance :
- 1.85mOhm
- Published :
- 2009
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 2.35V @ 100μA
- Width :
- 6mm
- Max Power Dissipation :
- 3.6W
- REACH SVHC :
- No SVHC
- Recovery Time :
- 36 ns
- Datasheets
- IRFH5301TR2PBF

N-Channel Cut Tape (CT) 1.85mOhm @ 50A, 10V 5114pF @ 15V 77nC @ 10V 30V 8-PowerVDFN
IRFH5301TR2PBF Overview
A device's maximum input capacitance is 5114pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 100A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 22 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 1.85mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 21 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 1.8V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).
IRFH5301TR2PBF Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 22 ns
single MOSFETs transistor is 1.85mOhm
a threshold voltage of 1.8V
a 30V drain to source voltage (Vdss)
IRFH5301TR2PBF Applications
There are a lot of Infineon Technologies
IRFH5301TR2PBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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