IRFH5300TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

8

Transistor Application :

SWITCHING

Radiation Hardening :

No

Turn On Delay Time :

26 ns

Threshold Voltage :

1.8V

FET Type :

N-Channel

Power Dissipation-Max :

3.6W Ta 250W Tc

Current - Continuous Drain (Id) @ 25°C :

40A Ta 100A Tc

Height :

850μm

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Turn-Off Delay Time :

31 ns

Avalanche Energy Rating (Eas) :

420 mJ

Continuous Drain Current (ID) :

100A

Vgs(th) (Max) @ Id :

2.35V @ 150μA

Power Dissipation :

3.6W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-N5

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

1.4m Ω @ 50A, 10V

Package / Case :

8-PowerVDFN

Length :

6mm

Additional Feature :

High Reliability

Factory Lead Time :

12 Weeks

Width :

5mm

Drain Current-Max (Abs) (ID) :

40A

Fall Time (Typ) :

13 ns

Published :

2004

Case Connection :

DRAIN

Number of Elements :

1

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

7200pF @ 15V

Mount :

Surface Mount

Rise Time :

30ns

Resistance :

1.4mOhm

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

5

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Series :

HEXFET®

Drain to Source Breakdown Voltage :

30V

Pulsed Drain Current-Max (IDM) :

400A

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON