IRFH5255TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

5

Resistance :

6mOhm

Turn On Delay Time :

7.9 ns

Height :

838.2μm

FET Type :

N-Channel

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

14.5nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

3.6W

Published :

2010

Fall Time (Typ) :

3.8 ns

Lead Free :

Lead Free

Series :

HEXFET®

Mount :

Surface Mount

Package / Case :

8-PowerVDFN

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Rise Time :

10.7ns

Avalanche Energy Rating (Eas) :

53 mJ

Number of Elements :

1

Power Dissipation-Max :

3.6W Ta 26W Tc

JESD-30 Code :

R-PDSO-N5

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Terminal Position :

Dual

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Radiation Hardening :

No

Width :

5mm

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

988pF @ 13V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

15A Ta 51A Tc

Number of Pins :

8

Transistor Application :

SWITCHING

Length :

5.9944mm

Rds On (Max) @ Id, Vgs :

6m Ω @ 15A, 10V

Continuous Drain Current (ID) :

51A

Turn-Off Delay Time :

6.5 ns

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

60A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Breakdown Voltage :

25V