IRFH5255TR2PBF
- Mfr.Part #
- IRFH5255TR2PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 15A 8VQFN
- Stock
- 24,725
- In Stock :
- 24,725
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 988pF @ 13V
- Supplier Device Package :
- 8-PQFN (5x6)
- Drain to Source Breakdown Voltage :
- 25V
- Turn-Off Delay Time :
- 6.5 ns
- REACH SVHC :
- No SVHC
- RoHS Status :
- RoHS Compliant
- Max Power Dissipation :
- 3.6W
- Current - Continuous Drain (Id) @ 25°C :
- 15A Ta 51A Tc
- Number of Pins :
- 8
- Packaging :
- Cut Tape (CT)
- Input Capacitance :
- 988pF
- Package / Case :
- 8-PowerVDFN
- Threshold Voltage :
- 1.8V
- Recovery Time :
- 17 ns
- Rise Time :
- 10.7ns
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 2.35V @ 25µA
- Drain to Source Voltage (Vdss) :
- 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2013
- FET Type :
- N-Channel
- Power Dissipation :
- 26W
- Min Operating Temperature :
- -55°C
- Width :
- 5mm
- Max Operating Temperature :
- 150°C
- Continuous Drain Current (ID) :
- 51A
- Rds On (Max) @ Id, Vgs :
- 6mOhm @ 15A, 10V
- Nominal Vgs :
- 1.8 V
- Series :
- HEXFET®
- Rds On Max :
- 6 mΩ
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 14.5nC @ 10V
- Turn On Delay Time :
- 7.9 ns
- Drain to Source Resistance :
- 10.9mOhm
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 3.8 ns
- Height :
- 838.2μm
- Length :
- 5.9944mm
- Datasheets
- IRFH5255TR2PBF

N-Channel Cut Tape (CT) 6mOhm @ 15A, 10V 988pF @ 13V 14.5nC @ 10V 25V 8-PowerVDFN
IRFH5255TR2PBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 988pF @ 13V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 51A amps.In this device, the drain-source breakdown voltage is 25V and VGS=25V, so the drain-source breakdown voltage is 25V in this case.It is [6.5 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 10.9mOhm.A turn-on delay time of 7.9 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.8V.To operate this transistor, you will need a 25V drain to source voltage (Vdss).
IRFH5255TR2PBF Features
a continuous drain current (ID) of 51A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 6.5 ns
single MOSFETs transistor is 10.9mOhm
a threshold voltage of 1.8V
a 25V drain to source voltage (Vdss)
IRFH5255TR2PBF Applications
There are a lot of Infineon Technologies
IRFH5255TR2PBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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