IRFH5250TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

838.2μm

Resistance :

1.75MOhm

Number of Pins :

8

Fall Time (Typ) :

19 ns

Length :

5.9944mm

Published :

2005

Mount :

Surface Mount

Factory Lead Time :

19 Weeks

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

1.8 V

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Terminal Position :

Dual

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

100A

Terminal Form :

NO LEAD

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

7174pF @ 13V

Case Connection :

DRAIN

Turn On Delay Time :

28 ns

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PDSO-N5

Drain Current-Max (Abs) (ID) :

45A

Power Dissipation-Max :

3.6W Ta 160W Tc

Width :

5mm

Qualification Status :

Not Qualified

Number of Terminations :

5

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

HEXFET®

Turn-Off Delay Time :

30 ns

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

25V

Additional Feature :

High Reliability

Power Dissipation :

3.6W

Rise Time :

46ns

Threshold Voltage :

1.8V

Vgs(th) (Max) @ Id :

2.35V @ 150μA

Current - Continuous Drain (Id) @ 25°C :

45A Ta 100A Tc

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

1.15m Ω @ 50A, 10V

Package / Case :

8-PowerVDFN

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

400A