IRFH5250DTRPBF
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- Mfr.Part #
- IRFH5250DTRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 40A/100A 8PQFN
- Stock
- 23,252
- In Stock ：
- 23,252
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 1.4m Ω @ 50A, 10V
- Avalanche Energy Rating (Eas) :
- 470 mJ
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 40A Ta 100A Tc
- Number of Pins :
- 8
- Height :
- 838.2μm
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Pulsed Drain Current-Max (IDM) :
- 400A
- Published :
- 2010
- Lead Free :
- Lead Free
- Series :
- HEXFET®
- Power Dissipation :
- 3.6W
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 12 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 5.9944mm
- Fall Time (Typ) :
- 24 ns
- Drain Current-Max (Abs) (ID) :
- 40A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Width :
- 5mm
- Case Connection :
- DRAIN
- Resistance :
- 1.4mOhm
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- 25V
- Number of Terminations :
- 5
- Turn-Off Delay Time :
- 23 ns
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Terminal Finish :
- Matte Tin (Sn)
- Power Dissipation-Max :
- 3.6W Ta 156W Tc
- Mounting Type :
- Surface Mount
- Rise Time :
- 72ns
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 83nC @ 10V
- JESD-30 Code :
- R-PDSO-N5
- Vgs(th) (Max) @ Id :
- 2.35V @ 150μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 6115pF @ 13V
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Package / Case :
- 8-PowerVDFN
- Turn On Delay Time :
- 23 ns
- Continuous Drain Current (ID) :
- 100A
- Datasheets
- IRFH5250DTRPBF
N-Channel Tape & Reel (TR) 1.4m Ω @ 50A, 10V ±20V 6115pF @ 13V 83nC @ 10V 8-PowerVDFN
IRFH5250DTRPBF Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 470 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6115pF @ 13V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 25V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 25V.There is no drain current on this device since the maximum continuous current it can conduct is 40A.As a result of its turn-off delay time, which is 23 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 400A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 23 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
IRFH5250DTRPBF Features
the avalanche energy rating (Eas) is 470 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 23 ns
based on its rated peak drain current 400A.
IRFH5250DTRPBF Applications
There are a lot of Infineon Technologies
IRFH5250DTRPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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