IRFH5250DTR2PBF
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- Mfr.Part #
- IRFH5250DTR2PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 40A 8VQFN
- Stock
- 12,269
- In Stock ：
- 12,269
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Resistance :
- 2.2MOhm
- Nominal Vgs :
- 1.8 V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -55°C
- Gate to Source Voltage (Vgs) :
- 20V
- Threshold Voltage :
- 1.8V
- FET Type :
- N-Channel
- Height :
- 838.2μm
- Length :
- 5.9944mm
- Recovery Time :
- 41 ns
- Continuous Drain Current (ID) :
- 100A
- Drain to Source Breakdown Voltage :
- 25V
- Turn-Off Delay Time :
- 23 ns
- Rds On (Max) @ Id, Vgs :
- 1.4mOhm @ 50A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 40A Ta 100A Tc
- Rise Time :
- 72ns
- Package / Case :
- 8-PowerVDFN
- Series :
- HEXFET®
- Power Dissipation :
- 250W
- Width :
- 5mm
- Input Capacitance :
- 706pF
- Fall Time (Typ) :
- 24 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 83nC @ 10V
- Rds On Max :
- 1.4 mΩ
- RoHS Status :
- RoHS Compliant
- Mount :
- Surface Mount
- Published :
- 2013
- Packaging :
- Cut Tape (CT)
- Turn On Delay Time :
- 23 ns
- Max Operating Temperature :
- 150°C
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Supplier Device Package :
- 8-PQFN (5x6)
- Number of Pins :
- 8
- Drain to Source Voltage (Vdss) :
- 25V
- Vgs(th) (Max) @ Id :
- 2.35V @ 150μA
- Max Power Dissipation :
- 3.6W
- Input Capacitance (Ciss) (Max) @ Vds :
- 6115pF @ 13V
- Datasheets
- IRFH5250DTR2PBF
N-Channel Cut Tape (CT) 1.4mOhm @ 50A, 10V 6115pF @ 13V 83nC @ 10V 25V 8-PowerVDFN
IRFH5250DTR2PBF Overview
A device's maximum input capacitance is 6115pF @ 13V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 100A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=25V, and this device has a drain-to-source breakdown voltage of 25V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 23 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 2.2mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 23 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 1.8V.To operate this transistor, you need to apply a 25V drain to source voltage (Vdss).
IRFH5250DTR2PBF Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 23 ns
single MOSFETs transistor is 2.2mOhm
a threshold voltage of 1.8V
a 25V drain to source voltage (Vdss)
IRFH5250DTR2PBF Applications
There are a lot of Infineon Technologies
IRFH5250DTR2PBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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