IRFH5220TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

47A

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Number of Pins :

8

Continuous Drain Current (ID) :

3.8A

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Turn On Delay Time :

7.2 ns

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

290 mJ

Drain Current-Max (Abs) (ID) :

20A

JESD-30 Code :

R-PDSO-N5

Series :

HEXFET®

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

99.9m Ω @ 5.8A, 10V

Power Dissipation :

3.6W

Vgs(th) (Max) @ Id :

5V @ 100µA

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.0999Ohm

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Number of Terminations :

5

Published :

2010

Package / Case :

8-VQFN Exposed Pad

Fall Time (Typ) :

3.4 ns

Rise Time :

4.7ns

Radiation Hardening :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

3.8A Ta 20A Tc

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Power Dissipation-Max :

3.6W Ta 8.3W Tc

Number of Elements :

1

Turn-Off Delay Time :

14 ns

Input Capacitance (Ciss) (Max) @ Vds :

1380pF @ 50V

Drain to Source Breakdown Voltage :

200V

Terminal Position :

Dual