IRFH5220TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2010

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Package / Case :

8-VQFN Exposed Pad

Rds On Max :

99.9 mΩ

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Turn-Off Delay Time :

14 ns

Vgs(th) (Max) @ Id :

5V @ 100µA

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

200V

Min Operating Temperature :

-55°C

Packaging :

Cut Tape (CT)

Height :

850μm

Supplier Device Package :

PQFN (5x6)

Fall Time (Typ) :

3.4 ns

Resistance :

99.9MOhm

Turn On Delay Time :

7.2 ns

Input Capacitance :

1.38nF

Length :

6mm

Width :

5mm

Power Dissipation :

3.6W

Number of Elements :

1

Element Configuration :

Single

Drain to Source Resistance :

99.9MOhm

Max Operating Temperature :

150°C

Continuous Drain Current (ID) :

3.8A

Nominal Vgs :

5 V

Input Capacitance (Ciss) (Max) @ Vds :

1380pF @ 50V

Rise Time :

4.7ns

Rds On (Max) @ Id, Vgs :

99.9mOhm @ 5.8A, 10V

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

3.8A Ta 20A Tc

Max Power Dissipation :

3.6W

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

Number of Pins :

8

Recovery Time :

59 ns

Drain to Source Voltage (Vdss) :

200V