IRFH5210TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Radiation Hardening :

No

Height :

838.2μm

Pulsed Drain Current-Max (IDM) :

220A

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

Turn-Off Delay Time :

21 ns

Lead Free :

Lead Free

Power Dissipation :

3.6W

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

55A

Power Dissipation-Max :

3.6W Ta 104W Tc

Fall Time (Typ) :

6.5 ns

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

2570pF @ 25V

Transistor Application :

SWITCHING

Terminal Position :

Dual

ECCN Code :

EAR99

Threshold Voltage :

4V

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

59nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

5

Transistor Element Material :

SILICON

Turn On Delay Time :

7.2 ns

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Published :

2011

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 100µA

Length :

5.9944mm

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Width :

5mm

Rise Time :

9.7ns

Current - Continuous Drain (Id) @ 25°C :

10A Ta 55A Tc

Vgs (Max) :

±20V

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

14.9m Ω @ 33A, 10V

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

100V

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

8-PowerVDFN

Continuous Drain Current (ID) :

100A

Factory Lead Time :

12 Weeks

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-N5