IRFH5210TR2PBF
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- Mfr.Part #
- IRFH5210TR2PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 10A 5X6 PQFN
- Stock
- 10,770
- In Stock ：
- 10,770
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance :
- 2.57nF
- Power Dissipation :
- 3.6W
- Series :
- HEXFET®
- Rds On Max :
- 14.9 mΩ
- Width :
- 5mm
- Number of Pins :
- 8
- Package / Case :
- 8-PowerVDFN
- Recovery Time :
- 44 ns
- Fall Time (Typ) :
- 6.5 ns
- Radiation Hardening :
- No
- Threshold Voltage :
- 2V
- Vgs(th) (Max) @ Id :
- 4V @ 100µA
- Height :
- 838.2μm
- Drain to Source Voltage (Vdss) :
- 100V
- RoHS Status :
- RoHS Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 10A Ta 55A Tc
- Supplier Device Package :
- 8-PQFN (5x6)
- Drain to Source Resistance :
- 14.9mOhm
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 2570pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Max Power Dissipation :
- 3.6W
- REACH SVHC :
- No SVHC
- Turn-Off Delay Time :
- 21 ns
- Nominal Vgs :
- 2 V
- Mounting Type :
- Surface Mount
- Min Operating Temperature :
- -55°C
- Rise Time :
- 9.7ns
- Continuous Drain Current (ID) :
- 100A
- FET Type :
- N-Channel
- Published :
- 2011
- Resistance :
- 14.9mOhm
- Packaging :
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs :
- 59nC @ 10V
- Turn On Delay Time :
- 7.2 ns
- Rds On (Max) @ Id, Vgs :
- 14.9mOhm @ 33A, 10V
- Max Operating Temperature :
- 150°C
- Length :
- 5.9944mm
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 100V
- Element Configuration :
- Single
- Number of Elements :
- 1
- Datasheets
- IRFH5210TR2PBF
N-Channel Cut Tape (CT) 14.9mOhm @ 33A, 10V 2570pF @ 25V 59nC @ 10V 100V 8-PowerVDFN
IRFH5210TR2PBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2570pF @ 25V.This device conducts a continuous drain current (ID) of 100A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 21 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 14.9mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 7.2 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 100V.
IRFH5210TR2PBF Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 14.9mOhm
a threshold voltage of 2V
a 100V drain to source voltage (Vdss)
IRFH5210TR2PBF Applications
There are a lot of Infineon Technologies
IRFH5210TR2PBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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