IRF9Z34STRLPBF
- Mfr.Part #
- IRF9Z34STRLPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 18A D2PAK
- Stock
- 19,377
- In Stock :
- 19,377
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Additional Feature :
- AVALANCHE RATED
- Height :
- 4.83mm
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Weight :
- 1.437803g
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- -60V
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 4
- Factory Lead Time :
- 8 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Continuous Drain Current (ID) :
- 18A
- Power Dissipation :
- 3.7W
- Pulsed Drain Current-Max (IDM) :
- 72A
- Number of Channels :
- 1
- Resistance :
- 140mOhm
- Contact Plating :
- Tin
- Rds On (Max) @ Id, Vgs :
- 140m Ω @ 11A, 10V
- Mount :
- Surface Mount
- Rise Time :
- 120ns
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~175°C TJ
- Drain to Source Voltage (Vdss) :
- 60V
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1100pF @ 25V
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Length :
- 10.67mm
- Number of Terminations :
- 2
- JESD-30 Code :
- R-PSSO-G2
- FET Type :
- P-Channel
- RoHS Status :
- ROHS3 Compliant
- Width :
- 9.65mm
- Fall Time (Typ) :
- 58 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Vgs (Max) :
- ±20V
- Published :
- 2013
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Power Dissipation-Max :
- 3.7W Ta 88W Tc
- Turn On Delay Time :
- 18 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 20 ns
- Datasheets
- IRF9Z34STRLPBF
P-Channel Tape & Reel (TR) 140m Ω @ 11A, 10V ±20V 1100pF @ 25V 34nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9Z34STRLPBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1100pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 18A amps.In this device, the drain-source breakdown voltage is -60V and VGS=-60V, so the drain-source breakdown voltage is -60V in this case.It is [20 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 72A.A turn-on delay time of 18 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRF9Z34STRLPBF Features
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 72A.
a 60V drain to source voltage (Vdss)
IRF9Z34STRLPBF Applications
There are a lot of Vishay Siliconix
IRF9Z34STRLPBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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