IRF9Z34S
- Mfr.Part #
- IRF9Z34S
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 18A D2PAK
- Stock
- 24,201
- In Stock :
- 24,201
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 10.67mm
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 20V
- Weight :
- 1.437803g
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Continuous Drain Current (ID) :
- 18A
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 140mOhm @ 11A, 10V
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- -60V
- Fall Time (Typ) :
- 58 ns
- Turn On Delay Time :
- 18 ns
- Drain to Source Resistance :
- 140mOhm
- Rise Time :
- 120ns
- FET Type :
- P-Channel
- Max Operating Temperature :
- 175°C
- RoHS Status :
- Non-RoHS Compliant
- Lead Free :
- Contains Lead
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- Operating Temperature :
- -55°C~175°C TJ
- Drain to Source Voltage (Vdss) :
- 60V
- Current Rating :
- -18A
- Mount :
- Surface Mount
- Min Operating Temperature :
- -55°C
- Number of Channels :
- 1
- Turn-Off Delay Time :
- 20 ns
- Supplier Device Package :
- D2PAK
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- -60V
- Width :
- 9.65mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Height :
- 4.83mm
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance :
- 1.1nF
- Published :
- 2016
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1100pF @ 25V
- Rds On Max :
- 140 mΩ
- Power Dissipation-Max :
- 3.7W Ta 88W Tc
- Datasheets
- IRF9Z34S
P-Channel Tube 140mOhm @ 11A, 10V ±20V 1100pF @ 25V 34nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9Z34S Overview
A device's maximal input capacitance is 1100pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 18A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 140mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRF9Z34S Features
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 20 ns
single MOSFETs transistor is 140mOhm
a 60V drain to source voltage (Vdss)
IRF9Z34S Applications
There are a lot of Vishay Siliconix
IRF9Z34S applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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