IRF9Z34NSTRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

68A

Rds On (Max) @ Id, Vgs :

100m Ω @ 10A, 10V

Number of Elements :

1

Series :

HEXFET®

Drain-source On Resistance-Max :

0.1Ohm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Published :

1997

Avalanche Energy Rating (Eas) :

180 mJ

Terminal Form :

Gull wing

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

55V

Factory Lead Time :

10 Weeks

Qualification Status :

Not Qualified

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

55V

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

FET Type :

P-Channel

Number of Terminations :

2

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 25V

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

3.8W Ta 68W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

19A

Transistor Application :

SWITCHING