IRF9Z34NSTRR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 25V

Power Dissipation-Max :

3.8W Ta 68W Tc

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Terminal Position :

Single

FET Type :

P-Channel

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.1Ohm

Drain to Source Voltage (Vdss) :

55V

Number of Elements :

1

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

1997

Packaging :

Tape and Reel (TR)

RoHS Status :

Non-RoHS Compliant

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

180 mJ

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

100m Ω @ 10A, 10V

Drain Current-Max (Abs) (ID) :

19A

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

68A

Current - Continuous Drain (Id) @ 25°C :

19A Tc

DS Breakdown Voltage-Min :

55V