IRF9Z34NSTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

-55V

Peak Reflow Temperature (Cel) :

260

Width :

9.65mm

Element Configuration :

Single

JESD-609 Code :

e3

Lead Free :

Contains Lead, Lead Free

JESD-30 Code :

R-PSSO-G2

Height :

4.83mm

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

68A

Voltage - Rated DC :

-55V

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Channels :

1

Radiation Hardening :

No

Mount :

Surface Mount

Mounting Type :

Surface Mount

Series :

HEXFET®

REACH SVHC :

No SVHC

Power Dissipation-Max :

3.8W Ta 68W Tc

Fall Time (Typ) :

41 ns

Power Dissipation :

68W

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 25V

Number of Terminations :

2

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Recovery Time :

82 ns

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Rise Time :

55ns

Rds On (Max) @ Id, Vgs :

100m Ω @ 10A, 10V

Continuous Drain Current (ID) :

-19A

Published :

1997

Resistance :

100MOhm

Number of Elements :

1

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Threshold Voltage :

-2V

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

12 Weeks

Turn On Delay Time :

13 ns

Max Junction Temperature (Tj) :

175°C

FET Type :

P-Channel

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Nominal Vgs :

-4 V

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Current Rating :

-19A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Length :

10.668mm

Turn-Off Delay Time :

30 ns

Dual Supply Voltage :

55V