IRF9Z34NSPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

180 mJ

Transistor Application :

SWITCHING

Power Dissipation-Max :

3.8W Ta 68W Tc

Drain to Source Voltage (Vdss) :

55V

Case Connection :

DRAIN

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

68A

Number of Terminations :

2

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.1Ohm

Series :

HEXFET®

DS Breakdown Voltage-Min :

55V

Terminal Position :

Single

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-609 Code :

e3

Factory Lead Time :

18 Weeks

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 25V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Rds On (Max) @ Id, Vgs :

100m Ω @ 10A, 10V

Packaging :

Tube

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

19A

Published :

1997

Surface Mount :

yes

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

FET Type :

P-Channel