IRF9Z34NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Turn-Off Delay Time :

30 ns

Operating Temperature :

-55°C~175°C TJ

Resistance :

100MOhm

Height :

8.77mm

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

100m Ω @ 10A, 10V

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Factory Lead Time :

12 Weeks

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Published :

1997

Mount :

Through Hole

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

FET Type :

P-Channel

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Lead Pitch :

2.54mm

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Dual Supply Voltage :

-55V

Continuous Drain Current (ID) :

-19A

Number of Elements :

1

Power Dissipation-Max :

68W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Threshold Voltage :

-4V

Termination :

Through Hole

Radiation Hardening :

No

JEDEC-95 Code :

TO-220AB

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

55ns

Vgs (Max) :

±20V

Width :

4.69mm

Peak Reflow Temperature (Cel) :

250

Turn On Delay Time :

13 ns

Voltage - Rated DC :

-55V

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 25V

Element Configuration :

Single

Nominal Vgs :

-4 V

Time@Peak Reflow Temperature-Max (s) :

30

Current Rating :

-19A

Pulsed Drain Current-Max (IDM) :

68A

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Length :

10.5156mm

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

55V

Power Dissipation :

56W

Package / Case :

TO-220-3

Packaging :

Tube

Recovery Time :

82 ns

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Contact Plating :

Tin

Fall Time (Typ) :

41 ns

Drain to Source Breakdown Voltage :

-55V