IRF9Z34NLPBF
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- Mfr.Part #
- IRF9Z34NLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- PLANAR 40<-<100V
- Stock
- 36,873
- In Stock ：
- 36,873
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Height :
- 9.65mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 620pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 19A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain-source On Resistance-Max :
- 0.1Ohm
- Drain to Source Breakdown Voltage :
- -55V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tube
- Avalanche Energy Rating (Eas) :
- 180 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 68A
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Turn On Delay Time :
- 13 ns
- Nominal Vgs :
- -4 V
- Number of Elements :
- 1
- Number of Pins :
- 3
- Length :
- 10.67mm
- Current Rating :
- -19A
- Continuous Drain Current (ID) :
- -19A
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 1997
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Lead Free :
- Lead Free
- Width :
- 4.826mm
- Power Dissipation :
- 68W
- Series :
- HEXFET®
- Power Dissipation-Max :
- 3.8W Ta 68W Tc
- Turn-Off Delay Time :
- 30 ns
- Transistor Application :
- SWITCHING
- Threshold Voltage :
- -4V
- Operating Temperature :
- -55°C~175°C TJ
- Radiation Hardening :
- No
- Rise Time :
- 55ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Voltage - Rated DC :
- -55V
- RoHS Status :
- RoHS Compliant
- Drain to Source Voltage (Vdss) :
- 55V
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Mount :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Fall Time (Typ) :
- 41 ns
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 10A, 10V
- FET Type :
- P-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Position :
- Single
- REACH SVHC :
- No SVHC
- Datasheets
- IRF9Z34NLPBF
P-Channel Tube 100m Ω @ 10A, 10V ±20V 620pF @ 25V 35nC @ 10V 55V TO-262-3 Long Leads, I2Pak, TO-262AA
IRF9Z34NLPBF Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 180 mJ.The maximum input capacitance of this device is 620pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -19A.When VGS=-55V, and ID flows to VDS at -55VVDS, the drain-source breakdown voltage is -55V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 30 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 68A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 13 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 55V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRF9Z34NLPBF Features
the avalanche energy rating (Eas) is 180 mJ
a continuous drain current (ID) of -19A
a drain-to-source breakdown voltage of -55V voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 68A.
a threshold voltage of -4V
a 55V drain to source voltage (Vdss)
IRF9Z34NLPBF Applications
There are a lot of Infineon Technologies
IRF9Z34NLPBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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