IRF9Z34NLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

-55V

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Position :

Single

Length :

10.67mm

Drain-source On Resistance-Max :

0.1Ohm

Mount :

Through Hole

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

FET Type :

P-Channel

Voltage - Rated DC :

-55V

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3

Fall Time (Typ) :

41 ns

Rise Time :

55ns

Operating Temperature :

-55°C~175°C TJ

Published :

1997

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 25V

Vgs (Max) :

±20V

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Turn On Delay Time :

13 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

-19A

Nominal Vgs :

-4 V

Power Dissipation :

68W

Pulsed Drain Current-Max (IDM) :

68A

Avalanche Energy Rating (Eas) :

180 mJ

Turn-Off Delay Time :

30 ns

Drain to Source Voltage (Vdss) :

55V

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Packaging :

Tube

Mounting Type :

Through Hole

Height :

9.65mm

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Number of Pins :

3

Radiation Hardening :

No

Series :

HEXFET®

Current Rating :

-19A

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

100m Ω @ 10A, 10V

Threshold Voltage :

-4V

Power Dissipation-Max :

3.8W Ta 68W Tc

Width :

4.826mm