IRF9Z34NL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Avalanche Energy Rating (Eas) :

180 mJ

Pulsed Drain Current-Max (IDM) :

68A

FET Type :

P-Channel

Drain Current-Max (Abs) (ID) :

19A

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

DS Breakdown Voltage-Min :

55V

Series :

HEXFET®

Drain to Source Voltage (Vdss) :

55V

Number of Terminations :

3

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

19A Tc

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

100m Ω @ 10A, 10V

Packaging :

Tube

Published :

1997

JESD-30 Code :

R-PSIP-T3

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Drain-source On Resistance-Max :

0.1Ohm

Power Dissipation-Max :

3.8W Ta 68W Tc

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 25V

Vgs (Max) :

±20V