IRF9Z34

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Mfr.Part #
IRF9Z34
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET P-CH 60V 18A TO220AB
Stock
3,581
In Stock :
3,581

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~175°C TJ
Gate to Source Voltage (Vgs) :
20V
Rds On Max :
140 mΩ
Continuous Drain Current (ID) :
18A
Element Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Fall Time (Typ) :
58 ns
Turn On Delay Time :
18 ns
Input Capacitance :
1.1nF
FET Type :
P-Channel
Min Operating Temperature :
-55°C
Max Operating Temperature :
175°C
Supplier Device Package :
TO-220AB
Rds On (Max) @ Id, Vgs :
140mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
1100pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
18A Tc
Radiation Hardening :
No
Vgs (Max) :
±20V
Turn-Off Delay Time :
20 ns
Mount :
Through Hole
Rise Time :
120ns
Width :
4.7mm
Number of Pins :
3
Power Dissipation :
88W
Length :
10.41mm
Lead Pitch :
2.54mm
Gate Charge (Qg) (Max) @ Vgs :
34nC @ 10V
Mounting Type :
Through Hole
Drain to Source Voltage (Vdss) :
60V
Vgs(th) (Max) @ Id :
4V @ 250µA
Packaging :
Tube
Package / Case :
TO-220-3
RoHS Status :
Non-RoHS Compliant
Published :
2015
Weight :
6.000006g
Drain to Source Breakdown Voltage :
-60V
Number of Elements :
1
Number of Channels :
1
Drain to Source Resistance :
140mOhm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
88W Tc
Height :
9.01mm
Datasheets
IRF9Z34
Introducing Transistors - FETs, MOSFETs - Single Vishay IRF9Z34 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Channels:1, IRF9Z34 pinout, IRF9Z34 datasheet PDF, IRF9Z34 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRF9Z34 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRF9Z34


P-Channel Tube 140mOhm @ 11A, 10V ±20V 1100pF @ 25V 34nC @ 10V 60V TO-220-3

IRF9Z34 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1100pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -60V.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 140mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 18 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRF9Z34 Features


a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 20 ns
single MOSFETs transistor is 140mOhm
a 60V drain to source voltage (Vdss)


IRF9Z34 Applications


There are a lot of Vishay Siliconix
IRF9Z34 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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