IRF9Z34
- Mfr.Part #
- IRF9Z34
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 18A TO220AB
- Stock
- 3,581
- In Stock :
- 3,581
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~175°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On Max :
- 140 mΩ
- Continuous Drain Current (ID) :
- 18A
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 58 ns
- Turn On Delay Time :
- 18 ns
- Input Capacitance :
- 1.1nF
- FET Type :
- P-Channel
- Min Operating Temperature :
- -55°C
- Max Operating Temperature :
- 175°C
- Supplier Device Package :
- TO-220AB
- Rds On (Max) @ Id, Vgs :
- 140mOhm @ 11A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1100pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Radiation Hardening :
- No
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 20 ns
- Mount :
- Through Hole
- Rise Time :
- 120ns
- Width :
- 4.7mm
- Number of Pins :
- 3
- Power Dissipation :
- 88W
- Length :
- 10.41mm
- Lead Pitch :
- 2.54mm
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- Mounting Type :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 60V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Packaging :
- Tube
- Package / Case :
- TO-220-3
- RoHS Status :
- Non-RoHS Compliant
- Published :
- 2015
- Weight :
- 6.000006g
- Drain to Source Breakdown Voltage :
- -60V
- Number of Elements :
- 1
- Number of Channels :
- 1
- Drain to Source Resistance :
- 140mOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 88W Tc
- Height :
- 9.01mm
- Datasheets
- IRF9Z34
P-Channel Tube 140mOhm @ 11A, 10V ±20V 1100pF @ 25V 34nC @ 10V 60V TO-220-3
IRF9Z34 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1100pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -60V.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 140mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 18 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRF9Z34 Features
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 20 ns
single MOSFETs transistor is 140mOhm
a 60V drain to source voltage (Vdss)
IRF9Z34 Applications
There are a lot of Vishay Siliconix
IRF9Z34 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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