IRF9Z30PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

50V

Power Dissipation :

74W

Turn On Delay Time :

12 ns

Rise Time :

110ns

Radiation Hardening :

No

Turn-Off Delay Time :

21 ns

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Fall Time (Typ) :

64 ns

Pbfree Code :

yes

Length :

10.41mm

Terminal Finish :

MATTE TIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

140m Ω @ 9.3A, 10V

Weight :

6.000006g

JESD-609 Code :

e3

Element Configuration :

Single

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Threshold Voltage :

-4V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Factory Lead Time :

8 Weeks

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

18A

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 25V

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Pin Count :

3

Drain to Source Breakdown Voltage :

-50V

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-220-3

Width :

4.7mm

Resistance :

140mOhm

Power Dissipation-Max :

74W Tc

JEDEC-95 Code :

TO-220AB

Height :

9.01mm

Pulsed Drain Current-Max (IDM) :

60A

FET Type :

P-Channel

REACH SVHC :

Unknown

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Case Connection :

DRAIN

Published :

2007