IRF9Z30

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

110ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-220-3

Published :

2000

Number of Elements :

1

ECCN Code :

EAR99

Width :

4.7mm

Rds On (Max) @ Id, Vgs :

140m Ω @ 9.3A, 10V

Continuous Drain Current (ID) :

18A

Number of Pins :

3

Drain to Source Voltage (Vdss) :

50V

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Weight :

6.000006g

Transistor Element Material :

SILICON

Element Configuration :

Single

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

10.41mm

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Fall Time (Typ) :

64 ns

JEDEC-95 Code :

TO-220AB

Height :

9.01mm

FET Type :

P-Channel

RoHS Status :

Non-RoHS Compliant

Number of Channels :

1

Pbfree Code :

No

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

3

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

50V

Pulsed Drain Current-Max (IDM) :

60A

Case Connection :

DRAIN

Power Dissipation-Max :

74W Tc

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

21 ns

Turn On Delay Time :

12 ns

Operating Mode :

ENHANCEMENT MODE