IRF9Z24STRRPBF
- Mfr.Part #
- IRF9Z24STRRPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 11A D2PAK
- Stock
- 10,978
- In Stock :
- 10,978
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Resistance :
- 280mOhm
- Packaging :
- Tape and Reel (TR)
- Number of Channels :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 570pF @ 25V
- Min Operating Temperature :
- -55°C
- Element Configuration :
- Single
- Height :
- 4.83mm
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Input Capacitance :
- 570pF
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Resistance :
- 280mOhm
- Factory Lead Time :
- 12 Weeks
- Weight :
- 1.437803g
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Turn On Delay Time :
- 13 ns
- Turn-Off Delay Time :
- 15 ns
- Fall Time (Typ) :
- 29 ns
- Mounting Type :
- Surface Mount
- Supplier Device Package :
- D2PAK
- Drain to Source Breakdown Voltage :
- -60V
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On Max :
- 280 mΩ
- Mount :
- Surface Mount
- Rise Time :
- 68ns
- FET Type :
- P-Channel
- Drain to Source Voltage (Vdss) :
- 60V
- Rds On (Max) @ Id, Vgs :
- 280mOhm @ 6.6A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 10V
- Length :
- 10.67mm
- Max Operating Temperature :
- 175°C
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2013
- Width :
- 9.65mm
- Power Dissipation-Max :
- 3.7W Ta 60W Tc
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- -11A
- Datasheets
- IRF9Z24STRRPBF
P-Channel Tape & Reel (TR) 280mOhm @ 6.6A, 10V ±20V 570pF @ 25V 19nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9Z24STRRPBF Overview
The maximum input capacitance of this device is 570pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -11A.When VGS=-60V, and ID flows to VDS at -60VVDS, the drain-source breakdown voltage is -60V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 15 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 280mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 13 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRF9Z24STRRPBF Features
a continuous drain current (ID) of -11A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 280mOhm
a 60V drain to source voltage (Vdss)
IRF9Z24STRRPBF Applications
There are a lot of Vishay Siliconix
IRF9Z24STRRPBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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