IRF9Z24STRLPBF
- Mfr.Part #
- IRF9Z24STRLPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 11A D2PAK
- Stock
- 76
- In Stock :
- 76
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 3.7W Ta 60W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- -11A
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Number of Pins :
- 3
- Element Configuration :
- Single
- Number of Channels :
- 1
- Rise Time :
- 68ns
- Max Operating Temperature :
- 175°C
- Width :
- 9.65mm
- Rds On Max :
- 280 mΩ
- FET Type :
- P-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 13 ns
- Turn-Off Delay Time :
- 15 ns
- Drain to Source Voltage (Vdss) :
- 60V
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 570pF @ 25V
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 10V
- Power Dissipation :
- 3.7W
- Min Operating Temperature :
- -55°C
- Height :
- 4.83mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Length :
- 10.67mm
- Input Capacitance :
- 570pF
- Drain to Source Resistance :
- 280mOhm
- Supplier Device Package :
- D2PAK
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 29 ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Published :
- 2012
- Weight :
- 1.437803g
- Operating Temperature :
- -55°C~175°C TJ
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- -60V
- Rds On (Max) @ Id, Vgs :
- 280mOhm @ 6.6A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Factory Lead Time :
- 12 Weeks
- Datasheets
- IRF9Z24STRLPBF
P-Channel Tape & Reel (TR) 280mOhm @ 6.6A, 10V ±20V 570pF @ 25V 19nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9Z24STRLPBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 570pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is -11A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-60V. And this device has -60V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 15 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 280mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 13 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRF9Z24STRLPBF Features
a continuous drain current (ID) of -11A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 280mOhm
a 60V drain to source voltage (Vdss)
IRF9Z24STRLPBF Applications
There are a lot of Vishay Siliconix
IRF9Z24STRLPBF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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