IRF9Z24PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 25V

Drain to Source Resistance :

280mOhm

Turn On Delay Time :

13 ns

Mounting Type :

Through Hole

Threshold Voltage :

-4V

Power Dissipation-Max :

60W Tc

Rise Time :

68ns

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Height :

19.89mm

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

60V

Number of Channels :

1

Operating Temperature :

-55°C~175°C TJ

Nominal Vgs :

-4 V

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Mount :

Through Hole

Turn-Off Delay Time :

15 ns

Width :

4.7mm

Length :

10.41mm

Supplier Device Package :

TO-220AB

Package / Case :

TO-220-3

Lead Free :

Lead Free

Number of Pins :

3

Resistance :

280mOhm

Number of Elements :

1

Drain to Source Breakdown Voltage :

-60V

Rds On (Max) @ Id, Vgs :

280mOhm @ 6.6A, 10V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

8 Weeks

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Power Dissipation :

60W

REACH SVHC :

Unknown

Rds On Max :

280 mΩ

Continuous Drain Current (ID) :

11A

Published :

2014

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

P-Channel

Input Capacitance :

570pF

Max Junction Temperature (Tj) :

175°C

Max Operating Temperature :

175°C

Min Operating Temperature :

-55°C

Packaging :

Tube

Weight :

6.000006g

Fall Time (Typ) :

29 ns