IRF9Z24NSTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

-12A

JESD-30 Code :

R-PSSO-G2

Radiation Hardening :

No

Number of Elements :

1

Number of Pins :

3

Turn On Delay Time :

13 ns

Peak Reflow Temperature (Cel) :

260

Termination :

SMD/SMT

Pulsed Drain Current-Max (IDM) :

48A

Drain to Source Voltage (Vdss) :

55V

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

4.826mm

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Fall Time (Typ) :

37 ns

Turn-Off Delay Time :

23 ns

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

175m Ω @ 7.2A, 10V

Packaging :

Tape and Reel (TR)

Factory Lead Time :

12 Weeks

Terminal Position :

Single

Continuous Drain Current (ID) :

-12A

Length :

10.668mm

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Case Connection :

DRAIN

Width :

9.65mm

Threshold Voltage :

4V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Number of Terminations :

2

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Published :

2005

FET Type :

P-Channel

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

-55V

Power Dissipation-Max :

3.8W Ta 45W Tc

Avalanche Energy Rating (Eas) :

96 mJ

Operating Temperature :

-55°C~175°C TJ

Nominal Vgs :

4 V

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Dual Supply Voltage :

-55V

Voltage - Rated DC :

-55V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ECCN Code :

EAR99

Power Dissipation :

45W

RoHS Status :

ROHS3 Compliant

Rise Time :

55ns

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Contains Lead

Series :

HEXFET®

Vgs(th) (Max) @ Id :

4V @ 250µA