IRF9Z24NSTRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

1999

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Power Dissipation-Max :

3.8W Ta 45W Tc

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Element Material :

SILICON

Series :

HEXFET®

Packaging :

Tape and Reel (TR)

RoHS Status :

Non-RoHS Compliant

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

96 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain-source On Resistance-Max :

0.175Ohm

Drain to Source Voltage (Vdss) :

55V

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Number of Terminations :

2

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

48A

DS Breakdown Voltage-Min :

55V

Terminal Position :

Single

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

175m Ω @ 7.2A, 10V

Mounting Type :

Surface Mount

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Drain Current-Max (Abs) (ID) :

12A

ECCN Code :

EAR99

FET Type :

P-Channel

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260