IRF9Z24NSPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

175m Ω @ 7.2A, 10V

Number of Elements :

1

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

-55V

Dual Supply Voltage :

55V

Element Configuration :

Single

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Power Dissipation-Max :

3.8W Ta 45W Tc

Packaging :

Tube

Avalanche Energy Rating (Eas) :

96 mJ

Transistor Element Material :

SILICON

Mount :

Surface Mount

Terminal Form :

Gull wing

Lead Free :

Lead Free

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Radiation Hardening :

No

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Mounting Type :

Surface Mount

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Published :

2005

Height :

4.83mm

RoHS Status :

ROHS3 Compliant

Power Dissipation :

45W

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

48A

Series :

HEXFET®

FET Type :

P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

-4V

Turn On Delay Time :

13 ns

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Case Connection :

DRAIN

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

12A Tc

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

23 ns

Fall Time (Typ) :

37 ns

Number of Terminations :

2

Nominal Vgs :

-4 V

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

30

Length :

10.67mm

Width :

10.54mm

Rise Time :

55ns

Number of Pins :

3

Continuous Drain Current (ID) :

-12A

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE