IRF9Z24NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

15.24mm

Drain to Source Voltage (Vdss) :

55V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

12A Tc

REACH SVHC :

No SVHC

Factory Lead Time :

12 Weeks

Resistance :

175mOhm

Recovery Time :

71 ns

Turn-Off Delay Time :

23 ns

Threshold Voltage :

-4V

Package / Case :

TO-220-3

Mounting Type :

Through Hole

Number of Elements :

1

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Number of Pins :

3

Dual Supply Voltage :

-55V

Number of Terminations :

3

Power Dissipation :

45W

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

FET Type :

P-Channel

Avalanche Energy Rating (Eas) :

96 mJ

Rds On (Max) @ Id, Vgs :

175m Ω @ 7.2A, 10V

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Turn On Delay Time :

13 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

-12A

Published :

1997

Width :

4.69mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Current Rating :

-12A

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Nominal Vgs :

-4 V

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Length :

10.5156mm

Lead Pitch :

2.54mm

Rise Time :

55ns

Termination :

Through Hole

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Series :

HEXFET®

Drain to Source Breakdown Voltage :

-55V

Power Dissipation-Max :

45W Tc

Fall Time (Typ) :

37 ns

Pulsed Drain Current-Max (IDM) :

48A

Voltage - Rated DC :

-55V

Contact Plating :

Tin

Packaging :

Tube

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V