IRF9Z24NL
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- Mfr.Part #
- IRF9Z24NL
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET P-CH 55V 12A TO262
- Stock
- 20,320
- In Stock ：
- 20,320
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- HEXFET®
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- RoHS Status :
- Non-RoHS Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 175mOhm @ 7.2A, 10V
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 10V
- Vgs (Max) :
- ±20V
- FET Type :
- P-Channel
- Packaging :
- Tube
- Published :
- 1999
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Supplier Device Package :
- TO-262
- Power Dissipation-Max :
- 3.8W Ta 45W Tc
- Drain to Source Voltage (Vdss) :
- 55V
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheets
- IRF9Z24NL
P-Channel Tube 175mOhm @ 7.2A, 10V ±20V 350pF @ 25V 19nC @ 10V 55V TO-262-3 Long Leads, I2Pak, TO-262AA
IRF9Z24NL Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 350pF @ 25V.Operating this transistor requires a 55V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRF9Z24NL Features
a 55V drain to source voltage (Vdss)
IRF9Z24NL Applications
There are a lot of Infineon Technologies
IRF9Z24NL applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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