IRF9Z20PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

-4V

Gate to Source Voltage (Vgs) :

20V

Input Capacitance :

480pF

Operating Temperature :

-55°C~150°C TJ

Published :

2014

Width :

4.7mm

Height :

9.01mm

Package / Case :

TO-220-3

Nominal Vgs :

-4 V

Number of Elements :

1

Max Operating Temperature :

150°C

Drain to Source Resistance :

280mOhm

Continuous Drain Current (ID) :

9.7A

Input Capacitance (Ciss) (Max) @ Vds :

480pF @ 25V

Rds On Max :

280 mΩ

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Radiation Hardening :

No

Number of Pins :

3

Rise Time :

57ns

Fall Time (Typ) :

25 ns

Resistance :

280mOhm

Current - Continuous Drain (Id) @ 25°C :

9.7A Tc

Supplier Device Package :

TO-220AB

Power Dissipation-Max :

40W Tc

Min Operating Temperature :

-55°C

Turn On Delay Time :

8.2 ns

Drain to Source Voltage (Vdss) :

50V

Vgs (Max) :

±20V

FET Type :

P-Channel

Weight :

6.000006g

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

10.41mm

Vgs(th) (Max) @ Id :

4V @ 250µA

REACH SVHC :

Unknown

Element Configuration :

Single

Packaging :

Tube

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Turn-Off Delay Time :

12 ns

Factory Lead Time :

12 Weeks

Power Dissipation :

40W

Rds On (Max) @ Id, Vgs :

280mOhm @ 5.6A, 10V