IRF9Z14STRLPBF
- Mfr.Part #
- IRF9Z14STRLPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 6.7A D2PAK
- Stock
- 22,287
- In Stock :
- 22,287
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Resistance :
- 500MOhm
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- FET Type :
- P-Channel
- Power Dissipation-Max :
- 3.7W Ta 43W Tc
- Operating Temperature :
- -55°C~175°C TJ
- Turn On Delay Time :
- 11 ns
- Max Operating Temperature :
- 175°C
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 8 Weeks
- Number of Channels :
- 1
- Continuous Drain Current (ID) :
- 6.7A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 60V
- Rise Time :
- 63ns
- Number of Elements :
- 1
- Min Operating Temperature :
- -55°C
- Mount :
- Surface Mount
- Power Dissipation :
- 3.7W
- Length :
- 10.67mm
- Turn-Off Delay Time :
- 10 ns
- Input Capacitance :
- 270pF
- Fall Time (Typ) :
- 31 ns
- Supplier Device Package :
- D2PAK
- Drain to Source Breakdown Voltage :
- -60V
- Width :
- 9.65mm
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Height :
- 4.83mm
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 270pF @ 25V
- Rds On Max :
- 500 mΩ
- Weight :
- 1.437803g
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 6.7A Tc
- Rds On (Max) @ Id, Vgs :
- 500mOhm @ 4A, 10V
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Datasheets
- IRF9Z14STRLPBF
P-Channel Tape & Reel (TR) 500mOhm @ 4A, 10V ±20V 270pF @ 25V 12nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9Z14STRLPBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 270pF @ 25V.This device has a continuous drain current (ID) of [6.7A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-60V, the drain-source breakdown voltage is -60V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 10 ns.MOSFETs have 500mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRF9Z14STRLPBF Features
a continuous drain current (ID) of 6.7A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 10 ns
single MOSFETs transistor is 500mOhm
a 60V drain to source voltage (Vdss)
IRF9Z14STRLPBF Applications
There are a lot of Vishay Siliconix
IRF9Z14STRLPBF applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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