IRF9Z14SPBF
- Mfr.Part #
- IRF9Z14SPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 6.7A D2PAK
- Stock
- 2,500
- In Stock :
- 2,500
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Weight :
- 1.437803g
- Rds On Max :
- 500 mΩ
- Vgs (Max) :
- ±20V
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 11 ns
- Power Dissipation :
- 3.7W
- Fall Time (Typ) :
- 31 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Breakdown Voltage :
- -60V
- Mount :
- Surface Mount, Through Hole
- Width :
- 9.65mm
- Packaging :
- Tube
- Resistance :
- 500MOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 270pF @ 25V
- Published :
- 2014
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 6.7A Tc
- Element Configuration :
- Single
- Height :
- 4.83mm
- Gate to Source Voltage (Vgs) :
- 20V
- Supplier Device Package :
- D2PAK
- Rds On (Max) @ Id, Vgs :
- 500mOhm @ 4A, 10V
- Max Operating Temperature :
- 175°C
- Input Capacitance :
- 270pF
- Drain to Source Voltage (Vdss) :
- 60V
- Drain to Source Resistance :
- 500MOhm
- Nominal Vgs :
- -4 V
- FET Type :
- P-Channel
- Dual Supply Voltage :
- 60V
- Length :
- 10.67mm
- Current Rating :
- -6.7A
- Number of Channels :
- 1
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Continuous Drain Current (ID) :
- -6.7A
- Rise Time :
- 63ns
- Voltage - Rated DC :
- -60V
- Operating Temperature :
- -55°C~175°C TJ
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Power Dissipation-Max :
- 3.7W Ta 43W Tc
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 10 ns
- Min Operating Temperature :
- -55°C
- Datasheets
- IRF9Z14SPBF
P-Channel Tube 500mOhm @ 4A, 10V ±20V 270pF @ 25V 12nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9Z14SPBF Overview
A device's maximum input capacitance is 270pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is -6.7A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-60V, and this device has a drain-to-source breakdown voltage of -60V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 10 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 500mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRF9Z14SPBF Features
a continuous drain current (ID) of -6.7A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 10 ns
single MOSFETs transistor is 500mOhm
a 60V drain to source voltage (Vdss)
IRF9Z14SPBF Applications
There are a lot of Vishay Siliconix
IRF9Z14SPBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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