IRF9Z14L

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.5Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2016

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Lead Free :

Contains Lead

Case Connection :

DRAIN

Power Dissipation-Max :

3.7W Ta 43W Tc

Drain to Source Voltage (Vdss) :

60V

Pulsed Drain Current-Max (IDM) :

27A

Pin Count :

3

Voltage - Rated DC :

-60V

Packaging :

Tube

Avalanche Energy Rating (Eas) :

140 mJ

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Current Rating :

-6.7A

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

6.7A Tc

Continuous Drain Current (ID) :

6.7A

FET Type :

P-Channel

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Rise Time :

63ns

RoHS Status :

Non-RoHS Compliant

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

500m Ω @ 4A, 10V

Mounting Type :

Through Hole

Qualification Status :

Not Qualified

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

270pF @ 25V

Reach Compliance Code :

Unknown

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSIP-T3

HTS Code :

8541.29.00.95