IRF9Z14
- Mfr.Part #
- IRF9Z14
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 6.7A TO220AB
- Stock
- 11,292
- In Stock :
- 11,292
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On Max :
- 500 mΩ
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 270pF @ 25V
- Input Capacitance :
- 270pF
- Rise Time :
- 63ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- -60V
- Drain to Source Resistance :
- 500MOhm
- Continuous Drain Current (ID) :
- -6.7A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Weight :
- 6.000006g
- Voltage - Rated DC :
- -60V
- Turn On Delay Time :
- 11 ns
- Mounting Type :
- Through Hole
- FET Type :
- P-Channel
- REACH SVHC :
- Unknown
- Turn-Off Delay Time :
- 10 ns
- Min Operating Temperature :
- -55°C
- Number of Channels :
- 1
- Current Rating :
- -6.7A
- Width :
- 4.7mm
- Mount :
- Through Hole
- Package / Case :
- TO-220-3
- RoHS Status :
- Non-RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 60V
- Vgs (Max) :
- ±20V
- Radiation Hardening :
- No
- Published :
- 2016
- Height :
- 9.01mm
- Max Operating Temperature :
- 175°C
- Nominal Vgs :
- -4 V
- Lead Free :
- Contains Lead
- Operating Temperature :
- -55°C~175°C TJ
- Length :
- 10.41mm
- Number of Pins :
- 3
- Supplier Device Package :
- TO-220AB
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 6.7A Tc
- Power Dissipation :
- 43W
- Fall Time (Typ) :
- 31 ns
- Power Dissipation-Max :
- 43W Tc
- Rds On (Max) @ Id, Vgs :
- 500mOhm @ 4A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- IRF9Z14
P-Channel Tube 500mOhm @ 4A, 10V ±20V 270pF @ 25V 12nC @ 10V 60V TO-220-3
IRF9Z14 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 270pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has -6.7A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -60V, and this device has a drainage-to-source breakdown voltage of -60VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 10 ns.This device has a drain-to-source resistance of 500mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF9Z14 Features
a continuous drain current (ID) of -6.7A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 10 ns
single MOSFETs transistor is 500mOhm
a 60V drain to source voltage (Vdss)
IRF9Z14 Applications
There are a lot of Vishay Siliconix
IRF9Z14 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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