IRF9Z10

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Mfr.Part #
IRF9Z10
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET P-CH 60V 6.7A TO220AB
Stock
17,913
In Stock :
17,913

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
TO-220-3
Input Capacitance :
270pF
Drive Voltage (Max Rds On,Min Rds On) :
10V
Element Configuration :
Single
Turn On Delay Time :
11 ns
Height :
9.01mm
Power Dissipation-Max :
43W Tc
Vgs(th) (Max) @ Id :
4V @ 250µA
Max Operating Temperature :
175°C
Rise Time :
63ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
20V
Number of Pins :
3
Published :
2011
Rds On Max :
500 mΩ
Drain to Source Resistance :
500MOhm
Mounting Type :
Through Hole
Fall Time (Typ) :
31 ns
Rds On (Max) @ Id, Vgs :
500mOhm @ 4A, 10V
Supplier Device Package :
TO-220AB
Packaging :
Tube
Width :
4.7mm
Drain to Source Voltage (Vdss) :
60V
Weight :
6.000006g
Number of Channels :
1
Vgs (Max) :
±20V
Min Operating Temperature :
-55°C
Operating Temperature :
-55°C~175°C TJ
Continuous Drain Current (ID) :
6.7A
Current - Continuous Drain (Id) @ 25°C :
6.7A Tc
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 10V
Length :
10.41mm
FET Type :
P-Channel
Mount :
Through Hole
Factory Lead Time :
13 Weeks
Input Capacitance (Ciss) (Max) @ Vds :
270pF @ 25V
Turn-Off Delay Time :
10 ns
RoHS Status :
Non-RoHS Compliant
Datasheets
IRF9Z10
Introducing Transistors - FETs, MOSFETs - Single Vishay IRF9Z10 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Pins:3, Mounting Type:Through Hole, Number of Channels:1, Operating Temperature:-55°C~175°C TJ, IRF9Z10 pinout, IRF9Z10 datasheet PDF, IRF9Z10 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRF9Z10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRF9Z10


P-Channel Tube 500mOhm @ 4A, 10V ±20V 270pF @ 25V 12nC @ 10V 60V TO-220-3

IRF9Z10 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 270pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 10 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 500mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 11 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRF9Z10 Features


a continuous drain current (ID) of 6.7A
the turn-off delay time is 10 ns
single MOSFETs transistor is 500mOhm
a 60V drain to source voltage (Vdss)


IRF9Z10 Applications


There are a lot of Vishay Siliconix
IRF9Z10 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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