IRF9640STRLPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

-200V

Min Operating Temperature :

-55°C

Length :

10.67mm

Max Operating Temperature :

150°C

Threshold Voltage :

4V

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Turn-Off Delay Time :

39 ns

Resistance :

500MOhm

Turn On Delay Time :

14 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Drain to Source Resistance :

500MOhm

FET Type :

P-Channel

Power Dissipation :

3W

Fall Time (Typ) :

38 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Supplier Device Package :

D2PAK

Rise Time :

43ns

Termination :

SMD/SMT

REACH SVHC :

Unknown

Number of Channels :

1

Width :

9.65mm

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Number of Elements :

1

Factory Lead Time :

8 Weeks

Weight :

1.946308g

Continuous Drain Current (ID) :

11A

Drain to Source Voltage (Vdss) :

200V

Published :

2014

Dual Supply Voltage :

200V

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

500mOhm @ 6.6A, 10V

Number of Pins :

3

Mounting Type :

Surface Mount

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Power Dissipation-Max :

3W Ta 125W Tc

Element Configuration :

Single

Rds On Max :

500 mΩ

Height :

4.83mm

Nominal Vgs :

4 V

Radiation Hardening :

No

Input Capacitance :

1.2nF