IRF9640S
- Mfr.Part #
- IRF9640S
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 11A D2PAK
- Stock
- 33,609
- In Stock :
- 33,609
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rds On Max :
- 500 mΩ
- Number of Channels :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 500mOhm @ 6.6A, 10V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drain to Source Voltage (Vdss) :
- 200V
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Contains Lead
- Packaging :
- Tube
- Power Dissipation-Max :
- 3W Ta 125W Tc
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 38 ns
- Drain to Source Resistance :
- 500MOhm
- Input Capacitance :
- 1.2nF
- Turn On Delay Time :
- 14 ns
- Max Operating Temperature :
- 150°C
- Drain to Source Breakdown Voltage :
- -200V
- Published :
- 2016
- Supplier Device Package :
- D2PAK
- Length :
- 10.67mm
- Vgs (Max) :
- ±20V
- RoHS Status :
- Non-RoHS Compliant
- Min Operating Temperature :
- -55°C
- Voltage - Rated DC :
- -200V
- FET Type :
- P-Channel
- Power Dissipation :
- 125W
- Current Rating :
- -11A
- Gate Charge (Qg) (Max) @ Vgs :
- 44nC @ 10V
- Weight :
- 1.437803g
- Height :
- 4.83mm
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Rise Time :
- 43ns
- Turn-Off Delay Time :
- 39 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 11A
- Mount :
- Surface Mount
- Width :
- 9.65mm
- Datasheets
- IRF9640S
P-Channel Tube 500mOhm @ 6.6A, 10V ±20V 1200pF @ 25V 44nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9640S Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1200pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -200V.As a result of its turn-off delay time, which is 39 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 500mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 14 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRF9640S Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 39 ns
single MOSFETs transistor is 500mOhm
a 200V drain to source voltage (Vdss)
IRF9640S Applications
There are a lot of Vishay Siliconix
IRF9640S applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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