IRF9640LPBF
- Mfr.Part #
- IRF9640LPBF
- Manufacturer
- Vishay
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 11A I2PAK
- Stock
- 5,716
- In Stock :
- 5,716
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Dual Supply Voltage :
- 200V
- Power Dissipation :
- 3W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 200V
- Published :
- 2010
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 38 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Weight :
- 6.000006g
- Turn-Off Delay Time :
- 39 ns
- Width :
- 4.7mm
- Element Configuration :
- Single
- Power Dissipation-Max :
- 3W Ta 125W Tc
- Drain to Source Breakdown Voltage :
- -200V
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 13 ns
- Termination :
- SMD/SMT
- FET Type :
- P-Channel
- Drain to Source Resistance :
- 500MOhm
- Continuous Drain Current (ID) :
- -11A
- Nominal Vgs :
- 4 V
- Rise Time :
- 43ns
- Rds On (Max) @ Id, Vgs :
- 500mOhm @ 6.6A, 10V
- Threshold Voltage :
- 4V
- Mount :
- Through Hole
- Number of Pins :
- 3
- REACH SVHC :
- Unknown
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Rds On Max :
- 500 mΩ
- Supplier Device Package :
- I2PAK
- Height :
- 9.01mm
- Vgs (Max) :
- ±20V
- Min Operating Temperature :
- -55°C
- Number of Elements :
- 1
- Length :
- 10.41mm
- Radiation Hardening :
- No
- Factory Lead Time :
- 8 Weeks
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Number of Channels :
- 1
- Max Operating Temperature :
- 150°C
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Input Capacitance :
- 1.2nF
- Datasheets
- IRF9640LPBF
P-Channel Tube 500mOhm @ 6.6A, 10V ±20V 1200pF @ 25V 44nC @ 10V 200V TO-262-3 Long Leads, I2Pak, TO-262AA
IRF9640LPBF Overview
A device's maximal input capacitance is 1200pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is -11A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 39 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 500mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRF9640LPBF Features
a continuous drain current (ID) of -11A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 39 ns
single MOSFETs transistor is 500mOhm
a threshold voltage of 4V
a 200V drain to source voltage (Vdss)
IRF9640LPBF Applications
There are a lot of Vishay Siliconix
IRF9640LPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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