IRF9630STRLPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

800mOhm

Contact Plating :

Tin

Length :

10.67mm

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

26A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

6.5A

Number of Channels :

1

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Dual Supply Voltage :

-200V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Pbfree Code :

yes

Power Dissipation-Max :

3W Ta 74W Tc

Termination :

SMD/SMT

JESD-609 Code :

e3

REACH SVHC :

Unknown

Number of Pins :

3

Mount :

Surface Mount, Through Hole

Power Dissipation :

3W

Rds On (Max) @ Id, Vgs :

800m Ω @ 3.9A, 10V

Number of Elements :

1

Width :

9.02mm

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

200V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

12 ns

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Rise Time :

27ns

Lead Free :

Lead Free

Turn-Off Delay Time :

28 ns

ECCN Code :

EAR99

Factory Lead Time :

8 Weeks

Drain to Source Breakdown Voltage :

-200V

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2013

Fall Time (Typ) :

24 ns

Avalanche Energy Rating (Eas) :

500 mJ

Pin Count :

4

Threshold Voltage :

-2V

Element Configuration :

Single

FET Type :

P-Channel

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Weight :

1.437803g

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

6.5A Tc

Nominal Vgs :

4 V

Height :

4.83mm

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSSO-G2