IRF9630

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.8Ohm

Power Dissipation-Max :

74W Tc

Reach Compliance Code :

Unknown

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Package / Case :

TO-220-3

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

800m Ω @ 3.9A, 10V

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

200V

Pulsed Drain Current-Max (IDM) :

26A

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

6.5A Tc

JESD-609 Code :

e0

Avalanche Energy Rating (Eas) :

500 mJ

Drain to Source Voltage (Vdss) :

200V

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

Non-RoHS Compliant

Surface Mount :

No

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Packaging :

Tube

Terminal Position :

Single

Qualification Status :

COMMERCIAL

Number of Terminations :

3

Pbfree Code :

No

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSFM-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

TIN LEAD

Drain Current-Max (Abs) (ID) :

6.5A

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED