IRF9622

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

290 mJ

Drive Voltage (Max Rds On, Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

350 pF @ 25 V

FET Feature :

-

Terminal Form :

THROUGH-HOLE

Gate Charge (Qg) (Max) @ Vgs :

22 nC @ 10 V

Pulsed Drain Current-Max (IDM) :

12 A

Rds On (Max) @ Id, Vgs :

2.4Ohm @ 1.5A, 10V

JESD-609 Code :

e0

Package :

Bulk

Transistor Element Material :

SILICON

Manufacturer :

Rochester Electronics LLC

DS Breakdown Voltage-Min :

200 V

Number of Elements :

1

Series :

-

Supplier Device Package :

TO-220

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

200 V

Operating Temperature :

-55°C ~ 150°C (TJ)

Polarity/Channel Type :

P-Channel

JEDEC-95 Code :

TO-220AB

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation (Max) :

40W (Tc)

Case Connection :

DRAIN

Surface Mount :

No

Pbfree Code :

No

Product Status :

Active

JESD-30 Code :

R-PSFM-T3

Qualification Status :

COMMERCIAL

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

3A (Tc)

Number of Terminals :

3

Reach Compliance Code :

Unknown

Package Shape :

RECTANGULAR

Drain-source On Resistance-Max :

2.4 Ω

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

TIN LEAD

Package / Case :

TO-220-3