IRF9620STRLPBF
- Mfr.Part #
- IRF9620STRLPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 3.5A D2PAK
- Stock
- 1,327
- In Stock :
- 1,327
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Channels :
- 1
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 20 ns
- Drain to Source Resistance :
- 1.5Ohm
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 25ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance :
- 350pF
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 15 ns
- Vgs (Max) :
- ±20V
- Factory Lead Time :
- 8 Weeks
- Lead Free :
- Lead Free
- Width :
- 9.65mm
- Power Dissipation-Max :
- 3W Ta 40W Tc
- Number of Pins :
- 3
- Drain to Source Voltage (Vdss) :
- 200V
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- -3.5A
- Drain to Source Breakdown Voltage :
- -200V
- Min Operating Temperature :
- -55°C
- Max Operating Temperature :
- 150°C
- Turn On Delay Time :
- 15 ns
- Rds On Max :
- 1.5 Ω
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 3.5A Tc
- Supplier Device Package :
- D2PAK
- Height :
- 4.83mm
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- FET Type :
- P-Channel
- Rds On (Max) @ Id, Vgs :
- 1.5Ohm @ 1.5A, 10V
- Published :
- 2016
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Resistance :
- 1.5Ohm
- Length :
- 10.67mm
- Weight :
- 1.437803g
- Packaging :
- Tape and Reel (TR)
- Datasheets
- IRF9620STRLPBF
P-Channel Tape & Reel (TR) 1.5Ohm @ 1.5A, 10V ±20V 350pF @ 25V 22nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9620STRLPBF Overview
The maximum input capacitance of this device is 350pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -3.5A.When VGS=-200V, and ID flows to VDS at -200VVDS, the drain-source breakdown voltage is -200V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 20 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 1.5Ohm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRF9620STRLPBF Features
a continuous drain current (ID) of -3.5A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 20 ns
single MOSFETs transistor is 1.5Ohm
a 200V drain to source voltage (Vdss)
IRF9620STRLPBF Applications
There are a lot of Vishay Siliconix
IRF9620STRLPBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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