IRF9610SPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

1.437803g

Power Dissipation :

3W

Length :

10.67mm

Min Operating Temperature :

-55°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

200V

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Channels :

1

Element Configuration :

Single

Supplier Device Package :

D2PAK

Rds On (Max) @ Id, Vgs :

3Ohm @ 900mA, 10V

Input Capacitance :

170pF

Drain to Source Resistance :

3Ohm

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Height :

4.83mm

Width :

9.65mm

Current - Continuous Drain (Id) @ 25°C :

1.8A Tc

Radiation Hardening :

No

Vgs (Max) :

±20V

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

170pF @ 25V

Fall Time (Typ) :

8 ns

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Rds On Max :

3 Ω

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2011

Continuous Drain Current (ID) :

-1.8A

Number of Pins :

3

Lead Free :

Lead Free

REACH SVHC :

Unknown

Drain to Source Breakdown Voltage :

-200V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Operating Temperature :

150°C

Turn On Delay Time :

8 ns

Mount :

Surface Mount

Factory Lead Time :

8 Weeks

Rise Time :

15ns

Threshold Voltage :

-4V

Power Dissipation-Max :

3W Ta 20W Tc

Turn-Off Delay Time :

1 ns

Mounting Type :

Surface Mount

FET Type :

P-Channel