IRF9610S
- Mfr.Part #
- IRF9610S
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 1.8A D2PAK
- Stock
- 8,246
- In Stock :
- 8,246
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Supplier Device Package :
- D2PAK
- Packaging :
- Tube
- Number of Channels :
- 1
- Width :
- 9.65mm
- Turn On Delay Time :
- 8 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Min Operating Temperature :
- -55°C
- Max Operating Temperature :
- 150°C
- Length :
- 10.67mm
- Rds On Max :
- 3 Ω
- Height :
- 4.83mm
- Power Dissipation :
- 20W
- Fall Time (Typ) :
- 8 ns
- Voltage - Rated DC :
- -200V
- Mount :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 200V
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 1.8A
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Resistance :
- 3Ohm
- Power Dissipation-Max :
- 3W Ta 20W Tc
- RoHS Status :
- Non-RoHS Compliant
- Lead Free :
- Contains Lead
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 3Ohm @ 900mA, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Weight :
- 1.437803g
- Gate to Source Voltage (Vgs) :
- 20V
- Current Rating :
- -1.8A
- Rise Time :
- 15ns
- Drain to Source Breakdown Voltage :
- -200V
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 10 ns
- Input Capacitance :
- 170pF
- Current - Continuous Drain (Id) @ 25°C :
- 1.8A Tc
- FET Type :
- P-Channel
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Published :
- 2016
- Input Capacitance (Ciss) (Max) @ Vds :
- 170pF @ 25V
- Datasheets
- IRF9610S
P-Channel Tube 3Ohm @ 900mA, 10V ±20V 170pF @ 25V 11nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9610S Overview
A device's maximal input capacitance is 170pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 1.8A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 10 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 3Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRF9610S Features
a continuous drain current (ID) of 1.8A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 10 ns
single MOSFETs transistor is 3Ohm
a 200V drain to source voltage (Vdss)
IRF9610S Applications
There are a lot of Vishay Siliconix
IRF9610S applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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