IRF9610PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Max Operating Temperature :

150°C

Min Operating Temperature :

-55°C

Factory Lead Time :

8 Weeks

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

-200V

Supplier Device Package :

TO-220AB

Element Configuration :

Single

Height :

9.01mm

Resistance :

3Ohm

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Lead Free :

Lead Free

Width :

4.7mm

Current - Continuous Drain (Id) @ 25°C :

1.8A Tc

Number of Channels :

1

Voltage :

200V

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

P-Channel

Fall Time (Typ) :

8 ns

Power Dissipation :

20W

Current Rating :

-1.8A

Nominal Vgs :

-4 V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

170pF @ 25V

Length :

10.41mm

Radiation Hardening :

No

Rise Time :

15ns

Gate to Source Voltage (Vgs) :

20V

Drain to Source Resistance :

3Ohm

Input Capacitance :

170pF

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Pins :

3

Rds On Max :

3 Ω

Drain to Source Voltage (Vdss) :

200V

Threshold Voltage :

-4V

Power Dissipation-Max :

20W Tc

Mount :

Through Hole

Package / Case :

TO-220-3

Voltage - Rated DC :

-200V

Continuous Drain Current (ID) :

-1.8A

REACH SVHC :

Unknown

Weight :

6.000006g

Turn On Delay Time :

8 ns

Rds On (Max) @ Id, Vgs :

3Ohm @ 900mA, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

10 ns

Published :

2008

Mounting Type :

Through Hole

Recovery Time :

360 ns